PTFB193404F Datasheet, Fets, Infineon

PTFB193404F Features

• Fets include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent ther

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PTFB193404F

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Infineon ↗

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fets. The PTFB193404F is a 340‑watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990

PTFB193404F Application

• Applications in the 1930 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earle

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PTFB193404F

Infineon

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