PTFB193404F Datasheet - Infineon

PTFB193404F, Thermally-Enhanced High Power RF LDMOS FETs

PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 * 1990 MHz .
The PTFB193404F is a 340‑watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency ban.

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Datasheet Details

Part number:

PTFB193404F

Manufacturer:

Infineon ↗

File Size:

434.69 KB

Description:

Thermally-Enhanced High Power RF LDMOS FETs

Features

* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB193404F Package H-37275-6/2 IMD, ACPR (dBc) Drain Efficiency (%) T

PTFB193404F Distributors

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PTFB193404F Thermally-Enhanced High Power LDMOS FETs Infineon

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