PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Description

PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 * 1990 MHz .
The PTFB193404F is a 340‑watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency ban.

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Datasheet Specifications

Part number: PTFB193404F
Manufacturer: Infineon ↗
File Size: 434.69 KB
Datasheet: PTFB193404F-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FETs

Features

* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB193404F Package H-37275-6/2 IMD, ACPR (dBc) Drain Efficiency (%) T

PTFB193404F Distributors

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PTFB193404F Thermally-Enhanced High Power LDMOS FETs Infineon

Infineon PTFB193404F-like datasheet