PTFB182503FL Features
* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB182503EL H-33288-6 PTFB182503FL H-34
PTFB182503EL-InfineonTechnologies.pdf
Datasheet Details
PTFB182503FL, PTFB182503EL
Infineon ↗ Technologies
435.94 KB
Thermally-enhanced high power rf ldmos fets.
This datasheet PDF includes multiple part numbers: PTFB182503FL, PTFB182503EL.
Please refer to the document for exact specifications by model.
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