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PTFB182503FL, PTFB182503EL Datasheet - Infineon Technologies

PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs

PTFB182503FL Features

* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB182503EL H-33288-6 PTFB182503FL H-34

PTFB182503EL-InfineonTechnologies.pdf

This datasheet PDF includes multiple part numbers: PTFB182503FL, PTFB182503EL. Please refer to the document for exact specifications by model.
PTFB182503FL Datasheet Preview Page 2 PTFB182503FL Datasheet Preview Page 3

Datasheet Details

Part number:

PTFB182503FL, PTFB182503EL

Manufacturer:

Infineon ↗ Technologies

File Size:

435.94 KB

Description:

Thermally-enhanced high power rf ldmos fets.

Note:

This datasheet PDF includes multiple part numbers: PTFB182503FL, PTFB182503EL.
Please refer to the document for exact specifications by model.

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PTFB182503FL PTFB182503EL Thermally-Enhanced High Power LDMOS FETs Infineon Technologies

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