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PTFB182503FL, PTFB182503EL Thermally-Enhanced High Power RF LDMOS FETs

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Description

PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 * 1880 MHz .
The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880.

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This datasheet PDF includes multiple part numbers: PTFB182503FL, PTFB182503EL. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
PTFB182503FL, PTFB182503EL
Manufacturer
Infineon ↗ Technologies
File Size
435.94 KB
Datasheet
PTFB182503EL-InfineonTechnologies.pdf
Description
Thermally-Enhanced High Power RF LDMOS FETs
Note
This datasheet PDF includes multiple part numbers: PTFB182503FL, PTFB182503EL.
Please refer to the document for exact specifications by model.

Features

* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB182503EL H-33288-6 PTFB182503FL H-34

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