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PTFB182503FL Datasheet - Infineon Technologies

PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs

PTFB182503FL Features

* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB182503EL H-33288-6 PTFB182503FL H-34

PTFB182503FL Datasheet (435.94 KB)

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Datasheet Details

Part number:

PTFB182503FL

Manufacturer:

Infineon ↗ Technologies

File Size:

435.94 KB

Description:

Thermally-enhanced high power rf ldmos fets.

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PTFB182503FL Thermally-Enhanced High Power LDMOS FETs Infineon Technologies

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