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PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz frequency band.

Key Features

  • include internal I/O matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA142401EL Package H-33288-2 PTFA142401FL Package H-34288-2 DVB-T Drive-up VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz, DVB-T signal, PAR = 9.65 dB at 0.01%, 8 MHz BW ACPR = 1475+/-4.3 MHz delta marker, 30 kHz RBW Adjacent Channel Power Ratio (dB) -25 40 Features.

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Datasheet Details

Part number PTFA142401EL
Manufacturer Infineon
File Size 460.71 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA142401EL Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz www.DataSheet4U.net Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz frequency band. Features include internal I/O matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA142401EL Package H-33288-2 PTFA142401FL Package H-34288-2 DVB-T Drive-up VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz, DVB-T signal, PAR = 9.65 dB at 0.01%, 8 MHz BW ACPR = 1475+/-4.