• Part: PTFA142401FL
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 460.71 KB
PTFA142401FL Datasheet (PDF) Download
Infineon
PTFA142401FL

Overview

The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz frequency band. Features include internal I/O matching and thermallyenhanced packages with slotted or earless flanges.

  • Drain Efficiency (%) Pb-free, RoHS-compliant and thermally-enhanced packages with less than 0.25 micron Au plating Broadband internal matching Typical DVB-T performance at 1475 MHz, 30 V - Average output power = 47.0 dBm - Linear Gain = 16.0 dB - Efficiency = 27.5% - Adjacent channel power = -32 dBc Typical CW performance, 1475 MHz, 30 V - Output power at P-1dB = 240 W - Efficiency = 52% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 200 W (CW) output power Efficiency -30 30 -35 20
  • -40 ACPR Hi ACPR Low 10 * *
  • -45 42 43 44 45 46 47 48 49 0 Average Output Power (dBm) RF Characteristics DVB-T Measurements (not subject to production test-verified by design/characterization in Infineon test fixture) ƒ = 1475 MHz DVB-T, channel bandwidth = 8.0 MHz , peak/average = 9.65 dB @ 0.01% CCDF VDD = 30 V, IDQ = 2.0 A, POUT = 50 W average Characteristic Gain Drain Efficiency Adjacent Channel Power Ratio (±4.3 MHz offset, 30 kHz RBW) Symbol Gps Min - - - Typ
  • 5 27.5 -32 Max - - - Unit dB % dBc ηD ACPR All published data at TC