Datasheet4U Logo Datasheet4U.com

PTFB090901EA Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Infineon

Overview: Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960.

General Description

The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band.

Key Features

  • include input and output matching, high gain and thermally-enhanced packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz 23 60 22 Gain 21 50 40 20 30 19 20.

More Datasheets from Infineon

Part Number Description
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET
PTFB091507FH Thermally-Enhanced High Power RF LDMOS FET
PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET
PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET
PTFB183404E High Power RF LDMOS Field Effect Transistors
PTFB183404F High Power RF LDMOS Field Effect Transistors
PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs
PTFB201402FC High Power RF LDMOS Field Effect Transistor

PTFB090901EA Distributor