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PTFB090901FA

Manufacturer: Infineon

PTFB090901FA datasheet by Infineon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFB090901FA datasheet preview

PTFB090901FA Datasheet Details

Part number PTFB090901FA
Datasheet PTFB090901FA PTFB090901EA Datasheet (PDF)
File Size 223.44 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA page 2 PTFB090901FA page 3

PTFB090901FA Overview

The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band.

PTFB090901FA Key Features

  • Input and output internal matching
  • Typical CW performance, 960 MHz, 28 V
  • Output power at P1dB = 90 W
  • Efficiency = 65%
  • Typical two-carrier WCDMA performance, 960 MHz, 28 V
  • Average output power = 20 W
  • Linear Gain = 20.8 dB
  • Efficiency = 35%
  • Intermodulation distortion = -35 dBc
  • Integrated ESD protection
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More Datasheets from Infineon

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PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET
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