PTFB090901FA - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Datasheet Details

Part number	PTFB090901FA
Manufacturer	Infineon
File Size	223.44 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFB090901FA Datasheet
Note	This datasheet PDF includes multiple part numbers: PTFB090901FA, PTFB090901EA. Please refer to the document for exact specifications by model.
Additional preview pages of the PTFB090901FA datasheet.

Product details

Description

The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power ampliﬁer applications in the 920 to 960 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced packages. Manufactured with Inﬁneon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz 23 60 22 Gain 21 50 40 20 30 19 20.

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Published: Feb 21, 2016 |