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PTFB090901FA - Thermally-Enhanced High Power RF LDMOS FET

Download the PTFB090901FA datasheet PDF. This datasheet also covers the PTFB090901EA variant, as both devices belong to the same thermally-enhanced high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band.

Key Features

  • include input and output matching, high gain and thermally-enhanced packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz 23 60 22 Gain 21 50 40 20 30 19 20.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFB090901EA-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFB090901FA
Manufacturer Infineon
File Size 223.44 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFB090901FA Datasheet

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Other Datasheets by Infineon

Part Number Description
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET
PTFB090901EA Thermally-Enhanced High Power RF LDMOS FET
PTFB091507FH Thermally-Enhanced High Power RF LDMOS FET
PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.