Datasheet4U Logo Datasheet4U.com
Infineon logo

PTFB182503EL

Manufacturer: Infineon

PTFB182503EL datasheet by Infineon.

PTFB182503EL datasheet preview

PTFB182503EL Datasheet Details

Part number PTFB182503EL
Datasheet PTFB182503EL-InfineonTechnologies.pdf
File Size 435.94 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
PTFB182503EL page 2 PTFB182503EL page 3

PTFB182503EL Overview

The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

PTFB182503EL Key Features

  • 35 Efficiency
  • Broadband internal input and output matching
  • Enhanced for use in DPD error correction systems
  • Typical two-carrier WCDMA performance, 1880 MHz, 30 V
  • Average output power = 50 W
  • Linear gain = 19 dB
  • Drain efficiency = 28 %
  • Intermodulation distortion = -35 dBc
  • Typical CW performance, 1880 MHz, 30 V
  • Output power at P1dB = 240 W
Infineon logo - Manufacturer

More Datasheets from Infineon

View all Infineon datasheets

Part Number Description
PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs
PTFB183408SV High Power RF LDMOS Field Effect Transistor
PTFB191501E Thermally-Enhanced High Power RF LDMOS FETs
PTFB191501F Thermally-Enhanced High Power RF LDMOS FETs
PTFB192503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs
PTFB241402F High Power RF LDMOS Field Effect Transistor
PTFA142401EL Thermally-Enhanced High Power RF LDMOS FET
PTFA142401FL Thermally-Enhanced High Power RF LDMOS FET
PTFA180701E Thermally-Enhanced High Power RF LDMOS FET

PTFB182503EL Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts