Description
The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Features
- include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB182503EL H-33288-6
PTFB182503FL H-34288-4/2
IM3 (dBc), ACPR (dBc) Drain Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ = 1842 MHz, 3GPP
WCDMA signal, PAR = 7.5 dB, 10 MHz carrier spacing
-30 35
-35 Efficiency
-.
PTFB182503EL Datasheet
