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PTFB182503FL Datasheet Thermally-enhanced High Power Rf Ldmos Fets

Manufacturer: Infineon

Overview: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Key Features

  • include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB182503EL H-33288-6 PTFB182503FL H-34288-4/2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ = 1842 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 10 MHz carrier spacing -30 35 -35 Efficiency -.

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PTFB182503FL Distributor