PTFB182503FL - Thermally-Enhanced High Power RF LDMOS FETs

Product Overview

Infineon Technologies

Datasheet Details

Part number	PTFB182503FL
Manufacturer	Infineon Technologies
File Size	435.94 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFB182503FL Datasheet
Note	This datasheet PDF includes multiple part numbers: PTFB182503FL, PTFB182503EL. Please refer to the document for exact specifications by model.
Additional preview pages of the PTFB182503FL datasheet.

Product details

Description

The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Features

include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB182503EL H-33288-6 PTFB182503FL H-34288-4/2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ = 1842 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 10 MHz carrier spacing -30 35 -35 Efficiency -.

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Other Datasheets by Infineon Technologies

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PTFB183408SV - High Power RF LDMOS Field Effect Transistor
PTFB191501E - Thermally-Enhanced High Power RF LDMOS FETs
PTFB191501F - Thermally-Enhanced High Power RF LDMOS FETs
PTFB192503EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB192503FL - Thermally-Enhanced High Power RF LDMOS FETs

Published: Feb 27, 2015 |