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BF998 - Silicon N-channel dual-gate MOS-FETs

Datasheet Summary

Description

Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected.

The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.

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Datasheet Details

Part number BF998
Manufacturer NXP
File Size 117.84 KB
Description Silicon N-channel dual-gate MOS-FETs
Datasheet download datasheet BF998 Datasheet
Additional preview pages of the BF998 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Silicon N-channel dual-gate MOS-FETs Product specification BF998; BF998R FEATURES  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS  VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected.
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