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BF998

Manufacturer: NXP Semiconductors

BF998 datasheet by NXP Semiconductors.

BF998 datasheet preview

BF998 Datasheet Details

Part number BF998
Datasheet BF998_PhilipsSemiconductors.pdf
File Size 117.84 KB
Manufacturer NXP Semiconductors
Description Silicon N-channel dual-gate MOS-FETs
BF998 page 2 BF998 page 3

BF998 Overview

Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package.

BF998 Key Features

  • Short channel transistor with high forward transfer
  • Low noise gain controlled amplifier up to 1 GHz

BF998 from other manufacturers

View BF998 datasheet index

Brand Logo Part Number Description Other Manufacturers
Infineon Logo BF998 Silicon N-Channel MOSFET Tetrode Infineon
Vishay Telefunken Logo BF998 N-Channel Dual Gate MOS-Fieldeffect Tetrode Vishay Telefunken
Siemens Semiconductor Group Logo BF998 Silicon N-Channel MOSFET Tetrode Siemens Semiconductor Group
Infineon Logo BF998R Silicon N-Channel MOSFET Tetrode Infineon
Siemens Semiconductor Group Logo BF998R Silicon N-Channel MOSFET Tetrode Siemens Semiconductor Group
NXP Semiconductors logo - Manufacturer

More Datasheets from NXP Semiconductors

View all NXP Semiconductors datasheets

Part Number Description
BF998R Silicon N-channel dual-gate MOS-FETs
BF998WR N-channel dual-gate MOS-FET
BF990A N-channel dual-gate MOS-FET
BF991 N-channel dual-gate MOS-FET
BF992 Silicon N-channel dual gate MOS-FET
BF994S N-channel dual-gate MOS-FET
BF996S N-channel dual-gate MOS-FET
BF997 N-channel dual-gate MOS-FET
BF901 Silicon n-channel dual gate MOS-FETs
BF901R Silicon n-channel dual gate MOS-FETs

BF998 Distributor

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