NXP Semiconductors BF998
The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. The gate-source input must be protected against static discharge during transport or handling.| Part No. | BF998 |
|---|---|
| Datasheet | BF998 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Silicon N-channel dual-gate MOS-FETs |
| Buy | Stock & Price |
FEATURES
● Short channel transistor with high forward transfer admittance to input capacitance ratio● Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
● VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.DESCRIPTION
Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected. CAUTION The device is supplied in an antistatic package. handbook, halfpage 4 3 d g2 g1 1 Top view 2 MAM039 s,b Marking code: MOp. Fig.1 Simplified outline (SOT143B) and symbol; BF998. handbook, halfpag3e 4 d g2 g1 PINNING PIN 1 2 3 4 SYMBOLDESCRIPTION
s, b source d drain g2 gate 2 g1 gate 1 QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot yfs Cig1-s Crs F drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure Tj operating junction temperature 2 Top view 1 MAM040 s,b Marking code: MOp.
