Datasheet Details
| Part number | BF998 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 117.84 KB |
| Description | Silicon N-channel dual-gate MOS-FETs |
| Datasheet |
 BF998 Datasheet
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General Description
Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected.
The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
Key Features
- Short channel transistor with high forward transfer admittance to input capacitance ratio.
- Low noise gain controlled amplifier up to 1 GHz.