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Silicon N Channel MOSFET Tetrode
BF 998
Features
q q
Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz
Type BF 998
Marking MO
Ordering Code (tape and reel) Q62702-F1129
Pin Configuration 1 2 3 4 S D G2 G1
Package1) SOT-143
Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TS < 76 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - soldering point Rth JS < 370 K/W Symbol VDS ID
±
Values 12 30 10 200 150
Unit V mA mW
IG1/2SM
Ptot Tstg Tch
– 55 … + 150 ˚C
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
BF 998
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
BF998 Datasheet
