BF998 Datasheet | Siemens Semiconductor Group

Features q q Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz Type BF 998 Marking MO Ordering Code (tape and reel) Q62702-F1129 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TS < 76 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - soldering point Rth JS < 370 K/W Symbol VDS ID ± Values 12 30 10 200 150 Unit V m A m W IG1/2SM Ptot Tstg Tch - 55 … + 150 ˚C 1) For detailed information see chapter Package Outlines. Semiconductor Group BF 998 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 10 µA, - VG1S = - VG2S = 4 V Gate 1-source breakdown voltage ± IG1S = 10 m A, VG2S = VDS = 0 Gate 2-source breakdown voltage ± IG2S = 10 m A, VG1S = VDS = 0 Gate 1-source leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2-source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 8 V, VG1S = 0, VG2S = 4 V Gate 1-source pinch-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 µA Gate 2-source pinch-off voltage VDS = 8 V, VG1S = 0, ID = 20 µA V(BR) DS ± V(BR) G1SS ± V(BR) G2SS ± IG1SS ± IG2SS Values typ. max. Unit 12 8 8 - - 2 - - - - - - - - - - - 12 12 50 50 18 2.5 2 V n A IDSS - VG1S(p) - VG2S(p) m A V Semiconductor...