BF998 Datasheet Silicon N-channel MOSFET Tetrode

Manufacturer: Siemens Semiconductor Group (now Infineon)

Overview: Silicon N Channel MOSFET Tetrode BF 998.

Datasheet Details

Part number	BF998
Manufacturer	Siemens Semiconductor Group (now Infineon)
File Size	180.21 KB
Description	Silicon N-Channel MOSFET Tetrode
Datasheet	BF998_SiemensSemiconductorGroup.pdf

q q Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz Type BF 998 Marking MO Ordering Code (tape and reel) Q62702-F1129 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TS < 76 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - soldering point Rth JS < 370 K/W Symbol VDS ID ± Va.

Part Number	Description	Other Manufacturers
BF998	Silicon N-Channel MOSFET Tetrode	Infineon
BF998	Silicon N-channel dual-gate MOS-FETs	NXP
BF998	N-Channel Dual Gate MOS-Fieldeffect Tetrode	Vishay Telefunken
BF998R	Silicon N-Channel MOSFET Tetrode	Infineon
BF998R	Silicon N-channel dual-gate MOS-FETs	NXP

Part Number	Description
BF998R	Silicon N-Channel MOSFET Tetrode
BF998W	Silicon N-Channel MOSFET Tetrode
BF994S	Silicon N Channel MOSFET Tetrode
BF995	Silicon N Channel MOSFET Tetrode
BF996S	Silicon N Channel MOSFET Tetrode
BF997	Silicon N Channel MOSFET Tetrode
BF999	Silicon N-Channel MOSFET Triode
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