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BF998 - Silicon N-Channel MOSFET Tetrode

Key Features

  • q q Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz Type BF 998 Marking MO Ordering Code (tape and reel) Q62702-F1129 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TS < 76 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - soldering point Rth JS < 370 K/W Symbol VDS ID ± Va.

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BF998R Silicon N-Channel MOSFET Tetrode
BF998W Silicon N-Channel MOSFET Tetrode
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BF995 Silicon N Channel MOSFET Tetrode
BF996S Silicon N Channel MOSFET Tetrode

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Silicon N Channel MOSFET Tetrode BF 998 Features q q Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz Type BF 998 Marking MO Ordering Code (tape and reel) Q62702-F1129 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TS < 76 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - soldering point Rth JS < 370 K/W Symbol VDS ID ± Values 12 30 10 200 150 Unit V mA mW IG1/2SM Ptot Tstg Tch – 55 … + 150 ˚C 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BF 998 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.