BF996S Datasheet | Siemens Semiconductor Group

Silicon N Channel MOSFET Tetrode q q q BF 996 S For input stages in UHF TV tuners High transconductance Low noise figure Type BF 996 S Marking MH Ordering Code (tape and reel) Q62702-F1021 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TA < 76 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - soldering point Rth JS < 370 K/W Symbol VDS ID ± Values 20 30 10 200 150 Unit V m A m W IG1/2SM Ptot Tstg Tch - 55 … + 150 ˚C 1) For detailed information see chapter Package Outlines. Semiconductor Group BF 996 S Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 10 µA, - VG1S = - VG2S = 4 V Gate 1 source breakdown voltage ± IG1S = 10 m A, VG2S = VDS = 0 Gate 2 source breakdown voltage ± IG2S = 10 m A, VG1S = VDS = 0 Gate 1 source leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 15 V, VG1S = 0, ID = 20 µA V(BR) DS ± ± ± ± Values typ. max. Unit 20 8.5 8.5 - - 2 - - - - - - - - - - - 14 14 50 50 20 2.5 2.0 V(BR) G1SS V(BR) G2SS IG1SS IG2SS n A IDSS - VG1S...