BF996S Datasheet | NXP Semiconductors

FEATURES - Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS - RF applications such as: - UHF television tuners - Professional munication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 Top view Marking code: MHp. MAM039 handbook, halfpage DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. 3 g2 g1 d DESCRIPTION 2 s,b Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig-1s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure f = 1 k Hz; ID = 10 m A; VDS = 15 V; VG2- S = 4 V up to Tamb = 60 °C CONDITIONS - - - - 18 TYP. MAX. 20 30 200 150 - 2.6 - - UNIT V m A m W °C m S p F f F d B input capacitance at gate 1 f = 1 MHz; ID = 10 m A; VDS = 15 V; VG2- S = 4 V 2.3 f = 1 MHz; ID = 10 m A; VDS = 15 V; VG2- S = 4 V 25 f = 200 MHz GS = 2 m S; BS = BSopt; ID = 10 m A; VDS = 15 V; VGS- 2 = 4 V 1 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID ID(AV) IG1-S IG1-S Ptot Tstg Tj PARAMETER drain-source voltage drain current (DC) average drain current gate 1 source gate 2 source total power dissipation storage temperature range junction temperature up to Tamb = 60 °C; note 1 CONDITIONS - - - - - - - 65 - MIN. MAX. 20 30 30 ±10 ±10 200 +150 150 V UNIT m A m A m A m A m W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE 460 UNIT K/W Note to the Limiting values and the Thermal characteristics 1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm. handbook, halfpage MGE792 Ptot (m W) 0 0 100 Tamb (°C)...