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BF996S Datasheet N-channel Dual-gate Mos-fet

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate.

General Description

Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.

4 3 g2 g1 d DESCRIPTION 1 2 s,b Fig.1 Simplified outline (SOT143) and symbol.

QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig-1s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure f = 1 kHz;

Key Features

  • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

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