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BF996S - N-channel dual-gate MOS-FET

General Description

Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.

Fig.1 Simplified outline (SOT143) and symbol.

Key Features

  • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such as: – UHF television tuners – Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 Top view Marking code: MHp. MAM039 handbook, halfpage BF996S DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. 4 3 g2 g1 d DESCRIPTION 1 2 s,b Fig.1 Simplified outline (SOT143) and symbol.