BF996S Datasheet and Specifications PDF

Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. 4 3 g2 g1 d DESCRIPTION 1 2 s,b Fig.1 Simplified outline (SOT143) and.

* Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS
* RF applications such as:
* UHF television tuners
* Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 Top view Marking c.

BF996S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tun.

D Integrated gate protection diodes D Low noise figure D Low feedback capacitance 2 1 D High cross modulation performance D Low input capacitance D High AGC-range G2 G1 D 94 9279 13 579 3 4 12623 BF996S Marking: MH Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 2, 4=Gate 1 S Absolute Maxim.

Silicon N Channel MOSFET Tetrode q q q BF 996 S For input stages in UHF TV tuners High transconductance Low noise figure Type BF 996 S Marking MH Ordering Code (tape and reel) Q62702-F1021 Pin C.

urce leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 15 V, VG1S = 0, ID = 20 µA V(BR) DS ± ±.