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BF994S - N-Channel Dual Gate MOS-Fieldeffect Tetrode

Key Features

  • D Integrated gate protection diodes D High cross modulation performance D Low noise figure 2 1 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 94 9279 13 579 3 4 12623 BF994 Marking: MG Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 2, 4=Gate 1 S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature ran.

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Datasheet Details

Part number BF994S
Manufacturer Vishay
File Size 119.03 KB
Description N-Channel Dual Gate MOS-Fieldeffect Tetrode
Datasheet download datasheet BF994S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BF994S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners.