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BF997 - N-channel dual-gate MOS-FET

General Description

Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.

Marking code: MKp.

Key Features

  • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
  • Integrated drain resistance to suppress oscillation in the frequency range greater than 1 GHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source • Integrated drain resistance to suppress oscillation in the frequency range greater than 1 GHz. APPLICATIONS • UHF and VHF applications such as: – UHF/VHF television tuners – Professional communication equipment • Especially intended for use in pre-amplifiers in CATV tuners with a large tuning range up to 500 MHz.