BF997 Datasheet | NXP Semiconductors

FEATURES - Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source - Integrated drain resistance to suppress oscillation in the frequency range greater than 1 GHz. APPLICATIONS - UHF and VHF applications such as: - UHF/VHF television tuners - Professional munication equipment - Especially intended for use in pre-amplifiers in CATV tuners with a large tuning range up to 500 MHz. 1 2 DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. handbook, halfpage 3 g 2 g1 d PINNING Top view MAM039 s,b PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION Marking code: MKp. Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig1-s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure f = 1 k Hz; ID = 10 m A; VDS = 15 V; VG2-S = 4 V up to Tamb = 60 °C CONDITIONS - - - - 18 TYP. MAX. 20 30 200 150 - - - - UNIT V m A m W °C m S p F f F d B input capacitance at gate 1 f = 1 MHz; ID = 10 m A; VDS = 15 V; VG2-S = 4 V 2.5 f = 1 MHz; ID = 10 m A; VDS = 15 V; VG2-S = 4 V 25 f = 200 MHz; GS = 2 m S; BS = BSopt; ID = 10 m A; VDS = 15 V; VG2-S = 4 V 1 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET LIMITING VALUES In according with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID ID(AV) IG1-S IG2-S Ptot Tstg Tj PARAMETER drain-source voltage drain current (DC) average drain current gate 1-source current gate 2-source current total power dissipation storage temperature junction temperature up to Tamb = 60 °C; note 1 CONDITIONS - - - - - - - 65 - MIN. MAX. 20 30 30 ±10 ±10 200 +150 150 UNIT V m A m A m A m A m W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1...