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BF997 Datasheet N-channel Dual-gate Mos-fet

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate.

General Description

Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.

handbook, halfpage 4 3 g 2 g1 d PINNING Top view MAM039 s,b PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION Marking code: MKp.

Fig.1 Simplified outline (SOT143) and symbol.

Key Features

  • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
  • Integrated drain resistance to suppress oscillation in the frequency range greater than 1 GHz.

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