BF997 Description
Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig1-s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure f = 1 kHz;.
BF997 Key Features
- Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source
- Integrated drain resistance to suppress oscillation in the frequency range greater than 1 GHz