NXP Semiconductors BF997
N-channel dual-gate MOS-FET
| Part No. | BF997 |
|---|---|
| Datasheet | BF997 Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel dual-gate MOS-FET |
| Buy | Stock & Price |
FEATURES
● Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source● Integrated drain resistance to suppress oscillation in the frequency range greater than 1 GHz.
APPLICATIONS
● UHF and VHF applications such as: – UHF/VHF television tuners – Professional communication equipment● Especially intended for use in pre-amplifiers in CATV tuners with a large tuning range up to 500 MHz. 1 2 BF997
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. handbook, halfpage 4 3 g 2 g1 d PINNING Top view MAM039 s,b PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1DESCRIPTION
Marking code: MKp. Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig1-s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure f = 1 kHz; ID = 10 mA; VDS = 15 V; VG2-S = 4 V up to Tamb = 60 °C CONDITIONS − − − − 18 TYP.
