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BF995 - N-Channel Dual Gate MOS-Fieldeffect Tetrode

Key Features

  • D Integrated gate protection diodes D High cross modulation performance D Low noise figure 2 1 D High AGC-range D Low feedback capacitance G2 G1 D 94 9279 13 579 3 4 12623 BF995 Marking: MB Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 2, 4=Gate 1 S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Typ.

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Datasheet Details

Part number BF995
Manufacturer Vishay
File Size 116.10 KB
Description N-Channel Dual Gate MOS-Fieldeffect Tetrode
Datasheet download datasheet BF995 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BF995 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.