BF995 Datasheet | Vishay

Features D Integrated gate protection diodes D High cross modulation performance D Low noise figure 2 1 D High AGC-range D Low feedback capacitance G2 G1 94 9279 13 579 BF995 Marking: MB Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 2, 4=Gate 1 Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 20 ID 30 ±IG1/G2SM 10 Ptot 200 TCh 150 Tstg - 55 to +150 Unit V m A m A m W °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol Rth Ch A Value 450 Unit K/W Document Number 85009 Rev. 3, 20-Jan-99 .vishay.de - Fax Back +1-408-970-5600 1 (7) Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 m A, - VG1S = - VG2S = 4 V ±IG1S = 10 m A, VG2S = VDS = 0 ±IG2S = 10 m A, VG1S = VDS = 0 ±VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = 15 V, VG1S = 0, VG2S = 4 V BF995 BF995A BF995B Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS IDSS IDSS IDSS - VG1S(OFF) - VG2S(OFF) 4 4 9.5 Min 20 8 8 Typ Max Unit V V V n A n A m A m A m A V V 14 14 100 100 18 10.5 18 3.5 3.5 Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 m A VDS = 15 V, VG1S = 0, ID = 20 m...