BF991
Description
s, b source d drain g2 gate 2 g1 gate 1 DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. handbook, halfpage 4 3 d g2 g1 1 Top view 2 MAM039 s,b.
Key Features
- Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
