NXP Semiconductors BF991
N-channel dual-gate MOS-FET
| Part No. | BF991 |
|---|---|
| Datasheet | BF991 Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel dual-gate MOS-FET |
| Buy | Stock & Price |
FEATURES
● Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.APPLICATIONS
● VHF applications such as: – VHF television tuners and FM tuners – Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOLDESCRIPTION
s, b source d drain g2 gate 2 g1 gate 1DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. handbook, halfpage 4 3 d g2 g1 1 Top view 2 MAM039 s,b Marking code: %MA. Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. VDS ID Ptot Tj Yfs Cig1-s Crs F drain-source voltage drain current total power dissipation junction temperature transfer admittance input capacitance at gate 1 feedback capacitance noise figure up to Tamb = 60 °C f = 1 kHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V f = 200 MHz; GS = 2 mS; BS = BSopt; ID = 10 mA; VDS = 10 V; VG2-S = 4 V − − − − 14 2.1 20 1 MAX.
