Datasheet Details
| Part number | BF992 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 234.60 KB |
| Description | Silicon N-channel dual gate MOS-FET |
| Datasheet | BF992_PhilipsSemiconductors.pdf |
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Overview: BF992 Silicon N-channel dual gate MOS-FET Rev. 04 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://.philips.semiconductors. use http://.nxp. http://.semiconductors.philips. use http://.nxp. (Internet) sales.addresses@.semiconductors.philips. use salesaddresses@nxp. (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Silicon N-channel dual gate MOS-FET Product specification BF992 APPLICATIONS • VHF applications such as VHF television tuners and FM tuners with 12 V supply voltage. The device is also suitable for use in professional munications equipment.
| Part number | BF992 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 234.60 KB |
| Description | Silicon N-channel dual gate MOS-FET |
| Datasheet | BF992_PhilipsSemiconductors.pdf |
|
|
|
Depletion type field-effect transistor in a plastic micro-miniature SOT143B package with source and substrate interconnected.
The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
PINNING PIN 1 2 3 4 SYMBOL DESCRIPTION s, b source d drain g2 gate 2 g1 gate 1 handbook, halfpage 4 3 d g2 g1 CAUTION The device is supplied in an antistatic package.
| Part Number | Description |
|---|---|
| BF990A | N-channel dual-gate MOS-FET |
| BF991 | N-channel dual-gate MOS-FET |
| BF994S | N-channel dual-gate MOS-FET |
| BF996S | N-channel dual-gate MOS-FET |
| BF997 | N-channel dual-gate MOS-FET |
| BF998 | Silicon N-channel dual-gate MOS-FETs |
| BF998R | Silicon N-channel dual-gate MOS-FETs |
| BF998WR | N-channel dual-gate MOS-FET |
| BF901 | Silicon n-channel dual gate MOS-FETs |
| BF901R | Silicon n-channel dual gate MOS-FETs |