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BF998R Datasheet N-channel Dual Gate Mos-fieldeffect Tetrode

Manufacturer: Vishay

Overview: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners.

Key Features

  • D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gain 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 BF998 Marking: MO Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 BF998R Marking: MOR Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 1 2 13 654 13 566 4 3 BF998RW Marking: WMO Plastic case (SOT 343R) 1 = Source, 2 =.

BF998R from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Infineon Logo BF998R Silicon N-Channel MOSFET Tetrode Infineon
Siemens Semiconductor Group Logo BF998R Silicon N-Channel MOSFET Tetrode Siemens Semiconductor Group
NXP Logo BF998R Silicon N-channel dual-gate MOS-FETs NXP
Infineon Logo BF998 Silicon N-Channel MOSFET Tetrode Infineon
NXP Logo BF998 Silicon N-channel dual-gate MOS-FETs NXP

More Datasheets from Vishay

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