| Part Number | BF998R datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | BF 998R Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electro. . |
BF998R Datasheet PDF
The BF998R is a Silicon N-Channel MOSFET Tetrode.
| Part Number | BF998R datasheet |
|---|---|
| Description | N-Channel Dual Gate MOS-Fieldeffect Tetrode |
| Manufacturer | Vishay |
| Overview | BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stag. D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gain 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 BF998 Marking: MO Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 =. |
| Part Number | BF998R datasheet |
|---|---|
| Description | Silicon N-channel dual-gate MOS-FETs |
| Manufacturer | NXP Semiconductors |
| Overview |
Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage su.
* Short channel transistor with high forward transfer admittance to input capacitance ratio * Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS * VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Depletion . |
| Part Number | BF998R datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET Tetrode |
| Manufacturer | Infineon |
| Overview | Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free (RoHS compliant) package BF998... ESD (E. Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = -4 V, VG2S = -4 V Gate 1 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate 1 source leakage current ±VG1S = 5 V, VG2S =. |