Infineon Technologies BF998
Silicon N-Channel MOSFET Tetrode
| Part No. | BF998 |
|---|---|
| Datasheet | BF998 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon N-Channel MOSFET Tetrode |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Value Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Total power dissipation TS ≤ 76 °C, BF998, BF998R Storage temperature Channel temperature VDS ID ±IG1/2SM Ptot TStg Tch 12 30 10 200 -55 ... 150 150 Thermal Resistance Parameter Symbol Value Channel - soldering point1), BF998, BF998R Rthchs ≤ 370 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Marking MOs MRs Unit V mA °C Unit K/W 1 2011-06-06 BF998...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = -4 V, VG2S = -4 V Gate 1 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate 1 source leakage current ±VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ±VG2S = 5 V, VG2S = VDS = 0 Drain current VDS = 8 V, VG1S = 0 , VG2S =...
