BF998 Datasheet | Infineon

Silicon N_Channel MOSFET Tetrode - Short-channel transistor with high S / C quality factor - For low-noise, gain-controlled input stage up to 1 GHz - Pb-free (Ro HS pliant) package BF998... ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration SOT143 1=S 2=D 3=G2 4=G1 - - BF998R SOT143R 1=D 2=S 3=G1 4=G2 - - Maximum Ratings Parameter Symbol Value Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Total power dissipation TS ≤ 76 °C, BF998, BF998R Storage temperature Channel temperature VDS ID ±IG1/2SM Ptot TStg Tch 12 30 10 200 -55 ... 150 150 Thermal Resistance Parameter Symbol Value Channel - soldering point1), BF998, BF998R Rthchs ≤ 370 1For calculation of Rth JA please refer to Application Note AN077 (Thermal Resistance Calculation) Marking MOs MRs Unit V m A °C Unit K/W 2011-06-06 BF998... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter...