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BF998RW - N-Channel Dual Gate MOS-Fieldeffect Tetrode

Key Features

  • D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gain 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 BF998 Marking: MO Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 BF998R Marking: MOR Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 1 2 13 654 13 566 4 3 BF998RW Marking: WMO Plastic case (SOT 343R) 1 = Source, 2 =.

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Datasheet Details

Part number BF998RW
Manufacturer Vishay
File Size 155.83 KB
Description N-Channel Dual Gate MOS-Fieldeffect Tetrode
Datasheet download datasheet BF998RW Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gain 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 BF998 Marking: MO Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 BF998R Marking: MOR Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 1 2 13 654 13 566 4 3 BF998RW Marking: WMO Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Document Number 85011 Rev.