Datasheet Details
| Part number | BF998R |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 117.84 KB |
| Description | Silicon N-channel dual-gate MOS-FETs |
| Datasheet | BF998R_PhilipsSemiconductors.pdf |
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Overview: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Silicon N-channel dual-gate MOS-FETs Product.
| Part number | BF998R |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 117.84 KB |
| Description | Silicon N-channel dual-gate MOS-FETs |
| Datasheet | BF998R_PhilipsSemiconductors.pdf |
|
|
|
Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected.
The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
CAUTION The device is supplied in an antistatic package.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BF998R | Silicon N-Channel MOSFET Tetrode | Infineon |
 |
BF998R | Silicon N-Channel MOSFET Tetrode | Siemens Semiconductor Group |
 |
BF998R | N-Channel Dual Gate MOS-Fieldeffect Tetrode | Vishay Telefunken |
|
BF998RW | N-Channel Dual Gate MOS-Fieldeffect Tetrode | Vishay Telefunken |
|
BF998 | Silicon N-Channel MOSFET Tetrode | Infineon |
| Part Number | Description |
|---|---|
| BF998 | Silicon N-channel dual-gate MOS-FETs |
| BF998WR | N-channel dual-gate MOS-FET |
| BF990A | N-channel dual-gate MOS-FET |
| BF991 | N-channel dual-gate MOS-FET |
| BF992 | Silicon N-channel dual gate MOS-FET |
| BF994S | N-channel dual-gate MOS-FET |
| BF996S | N-channel dual-gate MOS-FET |
| BF997 | N-channel dual-gate MOS-FET |
| BF901 | Silicon n-channel dual gate MOS-FETs |
| BF901R | Silicon n-channel dual gate MOS-FETs |