BF998R Datasheet | NXP Semiconductors

FEATURES - Short channel transistor with high forward transfer admittance to input capacitance ratio - Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS - VHF and UHF applications with 12 V supply voltage, such as television tuners and professional munications equipment. DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. handbook, halfpage 3 d g2 g1 Top view MAM039 s,b Marking code: MOp. Fig.1 Simplified outline (SOT143B) and symbol; BF998. handbook, halfpag3e 4 d g2 g1 PINNING PIN 1 2 3 4 SYMBOL DESCRIPTION s, b source d drain g2 gate 2 g1 gate 1 QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot yfs Cig1-s Crs F drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure Tj operating junction temperature Top view MAM040 s,b Marking code: MOp. Fig.2 Simplified outline (SOT143R) and symbol; BF998R. CONDITIONS f = 1 MHz f = 800 MHz TYP. - - - 24 2.1 25 1 - MAX. 12 30 200 - - - -...