BF997 Datasheet and Specifications PDF

Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. handbook, halfpage 4 3 g 2 g1 d PINNING Top view MAM039 s,b PIN 1 2 3.

* Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source
* Integrated drain resistance to suppress oscillation in the frequency range greater than 1 GHz. APPLICATIONS
* UHF and VHF applications such as:
* UHF/VHF television tuners
* Professional c.

Silicon N Channel MOSFET Tetrode q q BF 997 Integrated suppression network against spurious VHF oscillations For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuner.

= 0 Gate 2 source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 Gate 1 source leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA G.