PTFB182503EL
Infineon ↗ Technologies
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Thermally-enhanced high power rf ldmos fets. The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in
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PTFB182503FL - Thermally-Enhanced High Power RF LDMOS FETs
(Infineon Technologies)
PTFB182503EL PTFB182503FL
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz
Description
The PTFB182503EL and PTFB182503FL are 240-w.
PTFB183404E - High Power RF LDMOS Field Effect Transistors
(Infineon)
PTFB183404E PTFB183404F
High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz
Description
The PTFB183404E and PTFB183404F are 340-watt.
PTFB183404F - High Power RF LDMOS Field Effect Transistors
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PTFB183404E PTFB183404F
High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz
Description
The PTFB183404E and PTFB183404F are 340-watt.
PTFB183408SV - High Power RF LDMOS Field Effect Transistor
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PTFB183408SV
High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz
Description
The PTFB183408SV is a 340-watt LDMOS FET intended .
PTFB191501E - Thermally-Enhanced High Power RF LDMOS FETs
(Infineon Technologies)
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz
Description
The PTFB191501E and PTFB19.
PTFB191501F - Thermally-Enhanced High Power RF LDMOS FETs
(Infineon Technologies)
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz
Description
The PTFB191501E and PTFB19.
PTFB192503EL - Thermally-Enhanced High Power RF LDMOS FETs
(Infineon Technologies)
PTFB192503EL PTFB192503FL
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
Description
The PTFB192503EL and PTFB192503FL are 240-.
PTFB192503FL - Thermally-Enhanced High Power RF LDMOS FETs
(Infineon Technologies)
PTFB192503EL PTFB192503FL
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
Description
The PTFB192503EL and PTFB192503FL are 240-.
PTFB193404F - Thermally-Enhanced High Power RF LDMOS FETs
(Infineon)
PTFB193404F
Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz
Description
The PTFB193404F is a 340‑watt LDMOS FET intended fo.
PTFB090901EA - Thermally-Enhanced High Power RF LDMOS FET
(Infineon)
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz
Description
The PTFB090901EA and PT.