PTFB182503EL Datasheet - Infineon Technologies

PTFB182503EL, Thermally-Enhanced High Power RF LDMOS FETs

PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 * 1880 MHz .
The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880.

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Datasheet Details

Part number:

PTFB182503EL

Manufacturer:

Infineon ↗ Technologies

File Size:

435.94 KB

Description:

Thermally-Enhanced High Power RF LDMOS FETs

Features

* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB182503EL H-33288-6 PTFB182503FL H-34

PTFB182503EL Distributors

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PTFB182503EL Thermally-Enhanced High Power LDMOS FETs Infineon Technologies

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