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PTFB182503EL - Thermally-Enhanced High Power RF LDMOS FETs

PTFB182503EL Description

PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 * 1880 MHz .
The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880.

PTFB182503EL Features

* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB182503EL H-33288-6 PTFB182503FL H-34

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Thermally-Enhanced High Power LDMOS FETs Infineon Technologies
Infineon Technologies PTFB182503EL-like datasheet

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