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PTFB182503EL

Thermally-Enhanced High Power RF LDMOS FETs

PTFB182503EL Features

* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB182503EL H-33288-6 PTFB182503FL H-34

PTFB182503EL Datasheet (435.94 KB)

Preview of PTFB182503EL PDF

Datasheet Details

Part number:

PTFB182503EL

Manufacturer:

Infineon ↗ Technologies

File Size:

435.94 KB

Description:

Thermally-enhanced high power rf ldmos fets.

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PTFB182503EL Thermally-Enhanced High Power LDMOS FETs Infineon Technologies

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