PTFB090901EA Datasheet - Infineon

PTFB090901EA, Thermally-Enhanced High Power RF LDMOS FET

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 * 960 MHz .
The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power ampliﬁer applications in the 920 to 960 MHz.

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PTFB090901EA-Infineon.pdf

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Datasheet Details

Part number:

PTFB090901EA

Manufacturer:

Infineon ↗

File Size:

223.44 KB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, high gain and thermally-enhanced packages. Manufactured with Inﬁneon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA G

PTFB090901EA Distributors

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PTFB090901EA Thermally-Enhanced High Power LDMOS FET Infineon

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