PTFB183408SV Datasheet - Infineon Technologies

PTFB183408SV, High Power RF LDMOS Field Effect Transistor

PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 * 1880 MHz .
The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 1805 to 1880 MHz frequency ban.

PTFB183408SV-InfineonTechnologies.pdf

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Datasheet Details

Part number:

PTFB183408SV

Manufacturer:

Infineon ↗ Technologies

File Size:

250.19 KB

Description:

High Power RF LDMOS Field Effect Transistor

Features

* include input and output matching, high gain and thermally-enhanced package with earless ﬂange. Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB183408SV Package H-37275G-6/2 IMD & ACPR (dBc) Drain Efficiency (%)

PTFB183408SV Distributors

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PTFB183408SV High Power LDMOS Field Effect Transistor Infineon Technologies

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