Datasheet Specifications
- Part number
- PTFB183408SV
- Manufacturer
- Infineon ↗ Technologies
- File Size
- 250.19 KB
- Datasheet
- PTFB183408SV-InfineonTechnologies.pdf
- Description
- High Power RF LDMOS Field Effect Transistor
Description
PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 * 1880 MHz .
Features
* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB183408SV Package H-37275G-6/2 IMD & ACPR (dBc) Drain Efficiency (%)PTFB183408SV Distributors
📁 Related Datasheet
📌 All Tags