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PTFB183408SV Datasheet - Infineon Technologies

High Power RF LDMOS Field Effect Transistor

PTFB183408SV Features

* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB183408SV Package H-37275G-6/2 IMD & ACPR (dBc) Drain Efficiency (%)

PTFB183408SV Datasheet (250.19 KB)

Preview of PTFB183408SV PDF

Datasheet Details

Part number:

PTFB183408SV

Manufacturer:

Infineon ↗ Technologies

File Size:

250.19 KB

Description:

High power rf ldmos field effect transistor.

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PTFB183408SV High Power LDMOS Field Effect Transistor Infineon Technologies

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