PTFB183408SV Datasheet, Transistor, Infineon Technologies

PTFB183408SV Features

• Transistor include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent therma

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PTFB183408SV

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Infineon ↗ Technologies

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📄 Datasheet

Description:

High power rf ldmos field effect transistor. The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880

PTFB183408SV Application

• Applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earle

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PTFB183408SV

Infineon Technologies

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