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PTFB183408SV Datasheet - Infineon Technologies

PTFB183408SV - High Power RF LDMOS Field Effect Transistor

PTFB183408SV Features

* include input and output matching, high gain and thermally-enhanced package with earless ﬂange. Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB183408SV Package H-37275G-6/2 IMD & ACPR (dBc) Drain Efficiency (%)

PTFB183408SV-InfineonTechnologies.pdf