PTFB211803FL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803FL Features
* include input and output matching, high gain and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211803EL H-33288-6 PTFB211803FL H-34288-4/2 IMD (dBc)
