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PTFB241402F

High Power RF LDMOS Field Effect Transistor

PTFB241402F Features

* Broadband internal matching

* Typical CW performance, single side - Output power (1dB compression) = 70 W - Efficiency = 55%

* Increased negative gate-source voltage range for improved performance in Doherty amplifiers

* Integrated ESD protection

* Exce

PTFB241402F General Description

The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability. .

PTFB241402F Datasheet (439.18 KB)

Preview of PTFB241402F PDF

Datasheet Details

Part number:

PTFB241402F

Manufacturer:

Infineon ↗ Technologies

File Size:

439.18 KB

Description:

High power rf ldmos field effect transistor.

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TAGS

PTFB241402F High Power LDMOS Field Effect Transistor Infineon Technologies

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