PTFB241402F High Power RF LDMOS Field Effect Transistor

Infineon Technologies

Description

PTFB241402F High Power RF LDMOS Field Effect Transistor 140 W, 2300 * 2400 MHz .
The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package.

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Datasheet Specifications

Part number: PTFB241402F
Manufacturer: Infineon ↗ Technologies
File Size: 439.18 KB
Datasheet: PTFB241402F-InfineonTechnologies.pdf
Description: High Power RF LDMOS Field Effect Transistor

Features

* Broadband internal matching
* Typical CW performance, single side - Output power (1dB compression) = 70 W - Efficiency = 55%
* Increased negative gate-source voltage range for improved performance in Doherty amplifiers
* Integrated ESD protection
* Exce

Applications

* in the 2300 to 2400 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability. PTFB241402F Package H-37248-4 Gain (dB) Efficiency (%) CW Performance, Single Side VDD = 30 V, IDQ = 660 mA 17.4 60 17.2 55

PTFB241402F Distributors

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PTFB241402F High Power LDMOS Field Effect Transistor Infineon Technologies

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