PTFB211503EL Datasheet, Fets, Infineon

PTFB211503EL Features

  • Fets include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges.Manufactured with Infineon's advanced LDMOS process, these devices

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PTFB211503EL

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Infineon ↗

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fets. The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in

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PTFB211503EL Application

  • Applications in the 2110 to 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with

TAGS

PTFB211503EL
Thermally-Enhanced
High
Power
LDMOS
FETs
Infineon

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PTFB211803FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
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PTFB212503EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
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PTFB212503FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w.

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