PTFB211503EL Datasheet - Infineon

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PTFB211503EL Thermally-Enhanced High Power RF LDMOS FETs

PTFB211503EL PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 * 2170 MHz .
The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170.

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Datasheet Details

Part number:

PTFB211503EL

Manufacturer:

Infineon ↗

File Size:

457.97 KB

Description:

Thermally-Enhanced High Power RF LDMOS FETs

Features

* include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211503EL H-33288-6 PTFB211503FL H-34288-4/2 I

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PTFB211503EL Thermally-Enhanced High Power LDMOS FETs Infineon

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