PTFB211501F - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501F Features
* include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. PTFB211501E Package H-36248-2 PTFB211501F Package H-37248-2 ACP (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive Up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz 3GPP WCDMA, PAR =
