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PTFB211501F, PTFB211501E Thermally-Enhanced High Power RF LDMOS FETs

PTFB211501F Description

PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 * 2170 MHz .
The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110.

PTFB211501F Features

* include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. PTFB211501E Package H-36248-2 PTFB211501F Package H-37248-2 ACP (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive Up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz 3GPP WCDMA, PAR =

PTFB211501F Applications

* in the 2110

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PTFB211501F, PTFB211501E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PTFB211501F, PTFB211501E
Manufacturer
Infineon ↗
File Size
349.42 KB
Datasheet
PTFB211501E-Infineon.pdf
Description
Thermally-Enhanced High Power RF LDMOS FETs
Note
This datasheet PDF includes multiple part numbers: PTFB211501F, PTFB211501E.
Please refer to the document for exact specifications by model.

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Thermally-Enhanced High Power LDMOS FETs Infineon
Infineon PTFB211501F-like datasheet