PTFB211501F Description
The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 2170 frequency band.
PTFB211501F Key Features
- 45 ACP Low
- 50 10 ACP Up
- Broadband internal matching
- Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR
- Average output power = 40 W
- Linear Gain = 18 dB
- Efficiency = 32%
PTFB211501F Applications
- 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges