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PTFB211503FL - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFB211503FL datasheet PDF. This datasheet also covers the PTFB211503EL variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

General Description

The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band.

Key Features

  • include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211503EL H-33288-6 PTFB211503FL H-34288-4/2 IMD (dBc) Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -20 40 -25 35 -30 30 Efficiency -35 25.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFB211503EL-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFB211503FL
Manufacturer Infineon
File Size 457.97 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFB211503FL Datasheet

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Other Datasheets by Infineon

Part Number Description
PTFB211503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501E Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PTFB211503EL PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges.Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211503EL H-33288-6 PTFB211503FL H-34288-4/2 IMD (dBc) Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.