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PTFB211503EL - Thermally-Enhanced High Power RF LDMOS FETs

General Description

The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band.

Key Features

  • include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211503EL H-33288-6 PTFB211503FL H-34288-4/2 IMD (dBc) Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -20 40 -25 35 -30 30 Efficiency -35 25.

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Datasheet Details

Part number PTFB211503EL
Manufacturer Infineon
File Size 457.97 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFB211503EL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTFB211503EL PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges.Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211503EL H-33288-6 PTFB211503FL H-34288-4/2 IMD (dBc) Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.