PTFB211503EL
PTFB211503EL is Thermally-Enhanced High Power RF LDMOS FETs manufactured by Infineon.
Description
The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges.Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB211503EL H-33288-6
PTFB211503FL H-34288-4/2
IMD (d Bc) Efficiency (%)
Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 d B, 10 MHz carrier spacing,
BW 3.84 MHz
-20 40
-25 35
-30 30 Efficiency
-35 25
-40 20
-45
IMD Up
ACPR 15
-50
IMD Low
-55 5
-60 0 31 33 35 37 39 41 43 45 47 49 Output Power (d Bm)
Features
- Broadband internal matching
- Enhanced for use in DPD error correction systems
-...
