PTFB211501E
PTFB211501E is Thermally-Enhanced High Power RF LDMOS FETs manufactured by Infineon.
Description
The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110
- 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges.
PTFB211501E Package H-36248-2
PTFB211501F Package H-37248-2
ACP (d Bc) Drain Efficiency (%)
Single-carrier WCDMA Drive Up
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 8.5 d B, BW 3.84 MHz
-25 60
-30 50
-35
Efficiency
-40 30
-45 ACP Low
-50 10 ACP Up
-55 0 31 33 35 37 39 41 43 45 47 49
Output Power (d Bm)
Features
- Broadband internal matching
- Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 8.5 d B @ 0.01% CCDF
- Average output power = 40 W
- Linear Gain = 18 d B
- Efficiency = 32%
-...
