Description
The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110
2170 frequency band.
Features
- include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. PTFB211501E Package H-36248-2
PTFB211501F Package H-37248-2
ACP (dBc) Drain Efficiency (%)
Single-carrier WCDMA Drive Up
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 8.5 dB, BW 3.84 MHz
-25 60
-30 50
-35
Efficiency
40
-40 30
-45 ACP Low
20
-50 10 ACP Up
-55 0 31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Features.
- Broadband internal matching.
PTFB211501E Datasheet
