Datasheet4U Logo Datasheet4U.com

PTFB211501F - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFB211501F datasheet PDF. This datasheet also covers the PTFB211501E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

General Description

The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110

2170 frequency band.

Key Features

  • include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. PTFB211501E Package H-36248-2 PTFB211501F Package H-37248-2 ACP (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive Up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 8.5 dB, BW 3.84 MHz -25 60 -30 50 -35 Efficiency 40 -40 30 -45 ACP Low 20 -50 10 ACP Up -55 0 31 33 35 37 39 41 43 45 47 49 Output Power (dBm) Features.
  • Broadband internal matching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFB211501E-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFB211501F
Manufacturer Infineon
File Size 349.42 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFB211501F Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PTFB201402FC High Power RF LDMOS Field Effect Transistor Wolfspeed
PTFB241402F High Power RF LDMOS Field Effect Transistor Infineon Technologies
PTFB182503EL Thermally-Enhanced High Power RF LDMOS FETs Infineon Technologies
PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs Infineon Technologies
PTFB183408SV High Power RF LDMOS Field Effect Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
PTFB211501E Thermally-Enhanced High Power RF LDMOS FETs
PTFB211503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. PTFB211501E Package H-36248-2 PTFB211501F Package H-37248-2 ACP (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive Up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 8.5 dB, BW 3.