PTFB211803EL
PTFB211803EL is Thermally-Enhanced High Power RF LDMOS FETs manufactured by Infineon.
Description
The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB211803EL H-33288-6
PTFB211803FL H-34288-4/2
IMD (d Bc) / ACPR (d Bc) Efficiency (%)
Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 d B, 10 MHz carrier spacing,
BW 3.84 MHz
-20 40
-25 35
-30
Efficiency
-35 25
-40 IMD Up
-45 ACPR 15
-50 10 IMD Low
-55 5
-60 0 31 33 35 37 39 41 43 45 47 49 Output Power (d Bm)
Features
- Broadband internal matching
- Typical two-carrier WCDMA performance at 2170...
