PTFB211803FL - Thermally-Enhanced High Power RF LDMOS FETs

Product Overview

Infineon

Datasheet Details

Part number	PTFB211803FL
Manufacturer	Infineon
File Size	448.29 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFB211803FL Datasheet
Note	This datasheet PDF includes multiple part numbers: PTFB211803FL, PTFB211803EL. Please refer to the document for exact specifications by model.
Additional preview pages of the PTFB211803FL datasheet.

Product details

Description

The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211803EL H-33288-6 PTFB211803FL H-34288-4/2 IMD (dBc) / ACPR (dBc) Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -20 40 -25 35 -30 Efficiency 30.

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Published: Nov 27, 2016 |