PTFB211803EL Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Description

PTFB211803EL PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 * 2170 MHz .
The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170.

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Datasheet Specifications

Part number: PTFB211803EL
Manufacturer: Infineon ↗
File Size: 448.29 KB
Datasheet: PTFB211803EL-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FETs

Features

* include input and output matching, high gain and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211803EL H-33288-6 PTFB211803FL H-34288-4/2 IMD (dBc)

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PTFB211803EL Thermally-Enhanced High Power LDMOS FETs Infineon

Infineon PTFB211803EL-like datasheet