PTFB211503FL, PTFB211503EL Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Description

PTFB211503EL PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 * 2170 MHz .
The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170.

📥 Download Datasheet

PTFB211503FL Datasheet Preview — This datasheet PDF includes multiple part numbers: PTFB211503FL, PTFB211503EL. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PTFB211503FL, PTFB211503EL
Manufacturer: Infineon ↗
File Size: 457.97 KB
Datasheet: PTFB211503EL-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FETs
Note: This datasheet PDF includes multiple part numbers: PTFB211503FL, PTFB211503EL.
Please refer to the document for exact specifications by model.

Features

* include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211503EL H-33288-6 PTFB211503FL H-34288-4/2 I

PTFB211503FL Distributors

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PTFB211503EL Thermally-Enhanced High Power LDMOS FETs Infineon

Infineon PTFB211503FL-like datasheet