Description
The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band.
Features
- include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211503EL H-33288-6
PTFB211503FL H-34288-4/2
IMD (dBc) Efficiency (%)
Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-20 40
-25 35
-30 30 Efficiency
-35 25.
PTFB211503EL-Infineon.pdf