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PTFB201402FC High Power RF LDMOS Field Effect Transistor

PTFB201402FC Description

PTFB201402FC High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 * 2025 MHz .
The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package.

PTFB201402FC Features

* Broadband internal matching
* Typical CW performance, 28 V, single side - Output power, P1dB = 70 W - Efficiency = 56%
* Integrated ESD protection
* Excellent thermal stability
* Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power, per s

PTFB201402FC Applications

* in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability. PTFB201402FC Package H-37248-4 Power Gain (dB) Input Return Loss (dB) Small Signal CW Gain & Input Return Loss, single side VDD =

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High Power LDMOS Field Effect Transistor Infineon
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