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PTFB201402FC

High Power RF LDMOS Field Effect Transistor

PTFB201402FC Features

* Broadband internal matching

* Typical CW performance, 28 V, single side - Output power, P1dB = 70 W - Efficiency = 56%

* Integrated ESD protection

* Excellent thermal stability

* Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power, per s

PTFB201402FC General Description

The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and.

PTFB201402FC Datasheet (412.16 KB)

Preview of PTFB201402FC PDF

Datasheet Details

Part number:

PTFB201402FC

Manufacturer:

Infineon ↗

File Size:

412.16 KB

Description:

High power rf ldmos field effect transistor.

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PTFB201402FC High Power LDMOS Field Effect Transistor Infineon

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