PTFB201402FC Datasheet, Transistor, Infineon

PTFB201402FC Features

• Transistor
• Broadband internal matching
• Typical CW performance, 28 V, single side - Output power, P1dB = 70 W - Efficiency = 56%
• Integrated ESD protection

PDF File Details

Part number:

PTFB201402FC

Manufacturer:

Infineon ↗

File Size:

412.16kb

Download:

📄 Datasheet

Description:

High power rf ldmos field effect transistor. The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular a

PTFB201402FC Application

• Applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal perfo

TAGS

PTFB201402FC

Infineon

📁 Related Datasheet

PTFB201402FC - High Power RF LDMOS Field Effect Transistor (Wolfspeed)
PTFB201402FC High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs int.

PTFB210801FA - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in mu.

PTFB211501E - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally.

PTFB211501F - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally.

PTFB211503EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB211503EL PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are therm.

PTFB211503FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB211503EL PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are therm.

PTFB211803EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB211803EL PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-w.

PTFB211803FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB211803EL PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-w.

PTFB212503EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w.

PTFB212503FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w.