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GTVA126001EC Thermally-Enhanced High Power RF GaN HEMT

GTVA126001EC Description

GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC * 1.4 GHz .
The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.

GTVA126001EC Features

* GaN on SiC HEMT technology
* Input matched
* Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power (P3dB) = 600 W - Drain efficiency = 65% - Gain = 18 dB
* Capable of withstanding a 10:1 load mismatch (all phase

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Datasheet Details

Part number
GTVA126001EC
Manufacturer
Wolfspeed
File Size
436.96 KB
Datasheet
GTVA126001EC-Wolfspeed.pdf
Description
Thermally-Enhanced High Power RF GaN HEMT

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Thermally-Enhanced High Power GaN HEMT Wolfspeed
Wolfspeed GTVA126001EC-like datasheet