GTVA355001EC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA355001EC Features
* GaN on SiC HEMT technology
* Broadband internal input and output matching
* Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power at P3dB = 500 W - Drain efficiency = 65% - Gain = 13 dB
* Pb-free and RoHS complia
