GTRB424908FC Datasheet - MACOM

GTRB424908FC, Thermally-Enhanced High Power RF GaN on SiC HEMT

GTRB424908FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3700 * 4000 MHz .
The GTRB424908FC/1 is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifie.

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Datasheet Details

Part number:

GTRB424908FC

Manufacturer:

MACOM

File Size:

833.42 KB

Description:

Thermally-Enhanced High Power RF GaN on SiC HEMT

Features

* high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 250 mA, VGS(Peak) = -5 V, ƒ = 4000 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 40 35 30 25 2

GTRB424908FC Distributors

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GTRB424908FC Thermally-Enhanced High Power GaN SiC HEMT MACOM

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