GTRB267008FC Datasheet, Hemt, MACOM

✔ GTRB267008FC Features

high efficiency, and a thermally-enhanced package with earless flange. Package Type: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Dr

✔ GTRB267008FC Application

It features high efficiency, and a thermally-enhanced package with earless flange. Package Type: H-37248KC

PDF File Details

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Part number:

GTRB267008FC

Manufacturer:

MACOM

File Size:

1.82MB

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📄 Datasheet

Description:

Thermally-enhanced high power rf gan on sic hemt. The GTRB267008FC is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power am

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Stock and price

MACOM

RF JFET Transistors

Mouser Electronics

GTRB267008FC-V1-R2

0 In Stock

Qty : 250 units

Unit Price : $173.01

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GTRB267008FC Thermally-Enhanced High Power GaN SiC HEMT MACOM