GTRB267008FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

MACOM

GTRB267008FC Datasheet Preview — Preview of GTRB267008FC PDF

Datasheet Details

Part number	GTRB267008FC
Manufacturer	MACOM
File Size	1.82 MB
Description	Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet	GTRB267008FC-MACOM.pdf

GTRB267008FC Product details

Description

The GTRB267008FC is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Features

high efficiency, and a thermally-enhanced package with earless flange. Package Type: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 1000 mA, VGS(PEAK) = -4.8 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 Gain 16 20 12 0 8 -20 PAR @ 0.01% CCDF 4 -40 0 -60 25 30 35 40 45 50 55 Average Output Power (dBm) Features.
GaN on SiC HEMT technology.
Typical pulsed.

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Published: May 13, 2024 |