GTRA360502M Datasheet, Hemt, Wolfspeed

GTRA360502M Features

  • Hemt
  • GaN on SiC HEMT technology
  • Asymmetrical Doherty design - Main: P3dB = 20 W Typ - Peak: P3dB = 36 W Typ
  • Typical pulsed CW performance, 3600 MHz, 48 V, 10 μs

PDF File Details

Part number:

GTRA360502M

Manufacturer:

Wolfspeed

File Size:

767.59kb

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📄 Datasheet

Description:

Thermally-enhanced high power rf gan on sic hemt. The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power amplifiers. The device has been designed t

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GTRA360502M Application

  • Applications from 3,400 MHz to c 3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers a maximum, average output power of 8 wa

TAGS

GTRA360502M
Thermally-Enhanced
High
Power
GaN
SiC
HEMT
Wolfspeed

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Stock and price

MACOM
GaN FETs 50W, GaN HEMT, 48V, 3400-3800MHz, 248 PP
Mouser Electronics
GTRA360502M-V1-R3K
0 In Stock
Qty : 3000 units
Unit Price : $23.13
No Longer Stocked
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