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GTRA360502M

Thermally-Enhanced High Power RF GaN on SiC HEMT

GTRA360502M Features

* GaN on SiC HEMT technology

* Asymmetrical Doherty design - Main: P3dB = 20 W Typ - Peak: P3dB = 36 W Typ

* Typical pulsed CW performance, 3600 MHz, 48 V, 10 μs bandwidth, 10% duty cycle (Doherty configuration) - Output power at P3dB = 50 W - Drain efficiency = 62% @ 50 W

GTRA360502M General Description

The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power amplifiers. The device has been designed t for use in communications infrastructure applications from 3,400 MHz to c 3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers a maximum, avera.

GTRA360502M Datasheet (767.59 KB)

Preview of GTRA360502M PDF

Datasheet Details

Part number:

GTRA360502M

Manufacturer:

Wolfspeed

File Size:

767.59 KB

Description:

Thermally-enhanced high power rf gan on sic hemt.

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GTRA360502M Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed

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