GTRA360502M Datasheet - Wolfspeed

GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT

The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power ampliﬁers. The device has been designed t for use in communications infrastructure applications from 3,400 MHz to c 3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers a maximum, avera.

GTRA360502M Features

* GaN on SiC HEMT technology

* Asymmetrical Doherty design - Main: P3dB = 20 W Typ - Peak: P3dB = 36 W Typ

* Typical pulsed CW performance, 3600 MHz, 48 V, 10 μs bandwidth, 10% duty cycle (Doherty configuration) - Output power at P3dB = 50 W - Drain efficiency = 62% @ 50 W

GTRA360502M-Wolfspeed.pdf