GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT

Wolfspeed

Description

GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 * 3800 MHz .
The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power ampliﬁers.

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Datasheet Specifications

Part number: GTRA360502M
Manufacturer: Wolfspeed
File Size: 767.59 KB
Datasheet: GTRA360502M-Wolfspeed.pdf
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT

Features

* GaN on SiC HEMT technology
* Asymmetrical Doherty design - Main: P3dB = 20 W Typ - Peak: P3dB = 36 W Typ
* Typical pulsed CW performance, 3600 MHz, 48 V, 10 μs bandwidth, 10% duty cycle (Doherty configuration) - Output power at P3dB = 50 W - Drain efficiency = 62% @ 50 W

Applications

* from 3,400 MHz to c 3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers a maximum, average output power of 8 watts. GTRA360502M Package PG-DFN-6.5x7-1 Peak/Average Ratio (dB), Gain (dB) Efficiency (%) du Single-carrier WCDMA Drive-up VDD = 48V, IDQ = 25 mA, VGS(PEAK) =

GTRA360502M Distributors

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GTRA360502M Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed

Wolfspeed GTRA360502M-like datasheet