GTRA360502M - Thermally-Enhanced High Power RF GaN on SiC HEMT
The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power amplifiers.
The device has been designed t for use in communications infrastructure applications from 3,400 MHz to c 3,800 MHz.
It operates from a supply voltage of up to 50 volts and delivers a maximum, avera
GTRA360502M Features
* GaN on SiC HEMT technology
* Asymmetrical Doherty design - Main: P3dB = 20 W Typ - Peak: P3dB = 36 W Typ
* Typical pulsed CW performance, 3600 MHz, 48 V, 10 μs bandwidth, 10% duty cycle (Doherty configuration) - Output power at P3dB = 50 W - Drain efficiency = 62% @ 50 W
