GTRB224402FC Datasheet - MACOM

GTRB224402FC, Thermally-Enhanced High Power RF GaN on SiC HEMT

GTRB224402FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 2110 * 2200 MHz .
The GTRB224402FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier.

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Datasheet Details

Part number:

GTRB224402FC

Manufacturer:

MACOM

File Size:

915.41 KB

Description:

Thermally-Enhanced High Power RF GaN on SiC HEMT

Features

* high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 750 mA, VGS(PEAK) = -5.15 V, ƒ = 2200 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 20 4

GTRB224402FC Distributors

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GTRB224402FC Thermally-Enhanced High Power GaN SiC HEMT MACOM

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