Datasheet Details
- Part number
- GTRB224402FC
- Manufacturer
- MACOM
- File Size
- 915.41 KB
- Datasheet
- GTRB224402FC-MACOM.pdf
- Description
- Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB224402FC Description
GTRB224402FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 2110 * 2200 MHz .
The GTRB224402FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier.
GTRB224402FC Features
* high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 750 mA,
VGS(PEAK) = -5.15 V, ƒ = 2200 MHz, 3GPP
WCDMA signal, PAR = 10 dB, 3.84 MHz BW
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