GTRA362002FC Datasheet, Hemt, Wolfspeed

GTRA362002FC Features

  • Hemt input matching, high efficiency, and a thermally-enhanced package with earless flange. GTRA362002FC Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCD

PDF File Details

Part number:

GTRA362002FC

Manufacturer:

Wolfspeed

File Size:

239.54kb

Download:

📄 Datasheet

Description:

Thermally-enhanced high power rf gan on sic hemt. The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular

Datasheet Preview: GTRA362002FC 📥 Download PDF (239.54kb)
Page 2 of GTRA362002FC Page 3 of GTRA362002FC

GTRA362002FC Application

  • Applications It features input matching, high efficiency, and a thermally-enhanced package with earless flange. GTRA362002FC Package H-37248C-4 P

TAGS

GTRA362002FC
Thermally-Enhanced
High
Power
GaN
SiC
HEMT
Wolfspeed

📁 Related Datasheet

GTRA360502M - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Description The GTRA360502M houses two GaN-on-SiC power tra.

GTRA364002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S.

GTRA374902FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTRA374902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Description The GTRA374902FC is a 450-watt (P3dB) GaN on Si.

GTRA184602FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si.

GTRA262802FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si.

GTRA263902FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTRA263902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz Description The GTRA263902FC is a 370-watt (P3dB) GaN on Si.

GTRA412852FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTRA412852FC Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz Description The GTRA412852FC is a 235-watt (P3dB) GaN on Si.

GTR210 - Gastransmitter (ADOS)
e s t . 1 9 0 0 Instrumentation and Control Gastransmitter GTR 210 ADOS GmbH Instrumentation and Control P.O. Box 500 444 · 52088 Aachen · FRG Tr.

GTRB204402FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (MACOM)
GTRB204402FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 – 2020 MHz Description The GTRB204402FC/1 is a 350-watt (P3dB) GaN o.

GTRB206002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (MACOM)
GTRB206002FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 48 V, 1930 – 2020 MHz Description The GTRB206002FC/1 is a 500-watt (P3dB) GaN .

Stock and price

part
MACOM
RF MOSFET HEMT 48V H-37248C-4
DigiKey
GTRA362002FC-V1-R0
50 In Stock
Qty : 50 units
Unit Price : $149.5
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts