Datasheet Details
- Part number
- GTRA362002FC
- Manufacturer
- Wolfspeed
- File Size
- 239.54 KB
- Datasheet
- GTRA362002FC-Wolfspeed.pdf
- Description
- Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA362002FC Description
GTRA362002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 * 3600 MHz .
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier.
GTRA362002FC Features
* input matching, high efficiency, and a thermally-enhanced package with earless flange. GTRA362002FC Package H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 110 mA, VGS(PEAK) = -5.5 V, ƒ = 3600 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.
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