GTRA362002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA362002FC Features
* input matching, high efficiency, and a thermally-enhanced package with earless flange. GTRA362002FC Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 110 mA, VGS(PEAK) = -5.5 V, ƒ = 3600 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.
