GTRA362002FC Thermally-Enhanced High Power RF GaN on SiC HEMT

Wolfspeed

Description

GTRA362002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 * 3600 MHz .
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier.

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Datasheet Specifications

Part number: GTRA362002FC
Manufacturer: Wolfspeed
File Size: 239.54 KB
Datasheet: GTRA362002FC-Wolfspeed.pdf
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT

Features

* input matching, high efficiency, and a thermally-enhanced package with earless flange. GTRA362002FC Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 110 mA, VGS(PEAK) = -5.5 V, ƒ = 3600 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.

GTRA362002FC Distributors

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GTRA362002FC Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed

Wolfspeed GTRA362002FC-like datasheet