GTRA263902FC Thermally-Enhanced High Power RF GaN on SiC HEMT

Wolfspeed

Description

GTRA263902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 * 2690 MHz .
The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applicatio.

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Datasheet Specifications

Part number: GTRA263902FC
Manufacturer: Wolfspeed
File Size: 524.97 KB
Datasheet: GTRA263902FC-Wolfspeed.pdf
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT

Features

* input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 PN: GTRA263902FC Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR =

GTRA263902FC Distributors

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GTRA263902FC Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed

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