Datasheet Details
- Part number
- GTRA263902FC
- Manufacturer
- Wolfspeed
- File Size
- 524.97 KB
- Datasheet
- GTRA263902FC-Wolfspeed.pdf
- Description
- Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA263902FC Description
GTRA263902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 * 2690 MHz .
The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applicatio.
GTRA263902FC Features
* input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 PN: GTRA263902FC
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0 V, ƒ = 2690 MHz,
3GPP WCDMA signal, PAR =
📁 Related Datasheet
📌 All Tags