PTAC260302FC - Thermally-Enhanced High Power RF LDMOS FET
PTAC260302FC Features
* include input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. ACP Up and ACP Low (dBc) Drain Efficiency(%) Single-carrier WCDMA Drive-up VDD = 2
