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PTAC260302FC Datasheet - Infineon

PTAC260302FC Thermally-Enhanced High Power RF LDMOS FET

PTAC260302FC Features

* include input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. ACP Up and ACP Low (dBc) Drain Efficiency(%) Single-carrier WCDMA Drive-up VDD = 2

PTAC260302FC-Infineon.pdf

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Datasheet Details

Part number:

PTAC260302FC

Manufacturer:

Infineon ↗

File Size:

438.43 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTAC260302FC PTAC260302FC Thermally-Enhanced High Power LDMOS FET Infineon

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