PTAC260302SC
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Thermally-enhanced high power rf ldmos fet.
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PTAC260302FC - Thermally-Enhanced High Power RF LDMOS FET
(Infineon)
PTAC260302FC
Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz
Description
The PTAC260302FC is a 30-watt LDMOS FET intended for.
PTAC210802FC - Thermally-Enhanced High Power RF LDMOS FET
(Infineon)
PTAC210802FC
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz
Description
The PTAC210802FC is an 80-watt LDMOS FET with an asy.
PTAC210802FC - Thermally-Enhanced High Power RF LDMOS FET
(Wolfspeed)
PTAC210802FC
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 1805 – 2170 MHz
Description
The PTAC210802FC is an 80-watt LDMOS FET with an as.
PTAC240502FC - Thermally-Enhanced High Power RF LDMOS FET
(Infineon)
PTAC240502FC
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz
Description
The PTAC240502FC is a 47-watt LDMOS FET with an asym.
PTAC240502FC - Thermally-Enhanced High Power RF LDMOS FET
(Wolfspeed)
PTAC240502FC
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz
Description
The PTAC240502FC is a 47-watt LDMOS FET with an asym.
PTA07N65B - 650V N-ch Planar MOSFET
(PIP)
650V N-ch Planar MOSFET
General Features
RoHS Compliant RDS(ON),typ.=1.2 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body .
PTA07N80 - 800V N-Channel MOSFET
(PIP)
800V N-Channel MOSFET
General Features
Proprietary New Planar Technology RDS(ON),typ.=1.5 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recov.
PTA1543 - Low Profile Slide Potentiometer
(Bourns)
Features
n Carbon element n Metal housing n 15-60 mm travel n Single and dual gang n Center detent option n RoHS pliant*
PTA Series - Low Profile.
PTA2043 - Low Profile Slide Potentiometer
(Bourns)
Features
n Carbon element n Metal housing n 15-60 mm travel n Single and dual gang n Center detent option n RoHS pliant*
PTA Series - Low Profile.
PTA20N50A - 500V N-Channel MOSFET
(PIP)
500V N-Channel MOSFET
General Features
Proprietary New Planar Technology RDS(ON),typ.=0.24 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Reco.
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